Method for chemical vapor deposition control

ABSTRACT

A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to co-pending U.S. patent application Ser. No. 12/______, entitled “APPARATUS FOR CHEMICAL VAPOR DEPOSITION CONTROL”, Docket No. TDC-021, filed on even date herewith; pending U.S. patent application Ser. No. 11/693,067, entitled “VAPOR DEPOSITION SYSTEM AND METHOD OF OPERATING”, Docket No. TTCA-195, filed on Mar. 29, 2007; pending U.S. patent application Ser. No. 12/044,574, entitled “GAS HEATING DEVICE FOR A VAPOR DEPOSITION SYSTEM AND METHOD OF OPERATING”, Docket No. TTCA-216, filed on Mar. 7, 2008; and pending U.S. patent application Ser. No. 12/559,398, entitled “HIGH TEMPERATURE GAS HEATING DEVICE FOR A VAPOR DEPOSITION SYSTEM”, Docket No. TTCA-317, filed on Sep. 14, 2009. The entire content of these applications are herein incorporated by reference in their entirety.

BACKGROUND OF THE INVENTION

1. Field of Invention

The invention relates to a processing system and method for treating a substrate, and more particularly to a deposition system and method for depositing a thin film using a deposition process.

2. Description of Related Art

During material processing, such as semiconductor device manufacturing for production of integrated circuits (ICs), vapor deposition is a common technique to form thin films, as well as to form conformal thin films over and within complex topography, on a substrate. Vapor deposition processes can include chemical vapor deposition (CVD) and plasma enhanced CVD (PECVD). For example, in semiconductor manufacturing, such vapor deposition processes may be used for gate dielectric film formation in front-end-of-line (FEOL) operations, and low dielectric constant (low-k) or ultra-low-k, porous or non-porous, dielectric film formation and barrier/seed layer formation for metallization in back-end-of-line (BEOL) operations, as well as capacitor dielectric film formation in DRAM production.

In a CVD process, a continuous stream of film precursor vapor is introduced to a process chamber containing a substrate, wherein the composition of the film precursor has the principal atomic or molecular species found in the film to be formed on the substrate. During this continuous process, the precursor vapor is chemisorbed on the surface of the substrate while it thermally decomposes and reacts with or without the presence of an additional gaseous component that assists the reduction of the chemisorbed material, thus, leaving behind the desired film.

In a PECVD process, the CVD process further includes plasma that is utilized to alter or enhance the film deposition mechanism. For instance, plasma excitation can allow film-forming reactions to proceed at temperatures that are significantly lower than those typically required to produce a similar film by thermally excited CVD. In addition, plasma excitation may activate film-forming chemical reactions that are not energetically or kinetically favored in thermal CVD.

Other CVD techniques include hot-filament CVD (otherwise known as hot-wire CVD or pyrolytic CVD). In hot-filament CVD, a film precursor is thermally decomposed by a resistively heated filament, and the resulting fragmented molecules adsorb and react on the surface of the substrate to leave the desired film. Unlike PECVD, hot-filament CVD does not require formation of plasma.

SUMMARY OF THE INVENTION

The invention relates to a processing system and method for treating a substrate, and more particularly to a deposition system and method for depositing a thin film using a deposition process, such as a vapor deposition process.

The invention further relates to a deposition system and method for depositing a thin film using filament-assisted chemical vapor deposition (CVD) or pyrolytic CVD, wherein a gas heating device comprising a heating element array is utilized to pyrolyze a film forming composition.

According to one embodiment, a gas heating device for use in a deposition system is described. The gas heating device may be configured to heat one or more constituents of a film forming composition. The gas heating device comprises a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through the plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated, each of the plurality of heating element zones comprises one or more resistive heating elements, wherein each of the plurality of heating element zones is configured electrically independent of one another, and wherein each of the plurality of heating element zones is arranged to interact with at least a portion of the flow, and affect pyrolysis of and delivery of the film forming composition to different regions of the substrate; and one or more power sources coupled to the heating element array, and configured to provide an electrical signal to each of the plurality of heating element zones.

According to another embodiment, a deposition system for depositing a thin film on a substrate using a gas heating device is described. The deposition system comprises a process chamber having a pumping system configured to evacuate the process chamber; a substrate holder coupled to the process chamber and configured to support the substrate; and a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate. The deposition system further comprises a heating element array having a plurality of heating element zones configured to receive a flow of the film forming composition across or through the plurality of heating element zones in order cause pyrolysis of one or more constituents of the film forming composition when heated, each of the plurality of heating element zones comprises one or more resistive heating elements, wherein each of the plurality of heating element zones is configured electrically independent of one another, and wherein each of the plurality of heating element zones is arranged to interact with at least a portion of the flow, and affect pyrolysis of and delivery of the film forming composition to different regions of the substrate; and one or more power sources coupled to the heating element array, and configured to provide an electrical signal to each of the plurality of heating element zones.

According to yet another embodiment, a method of depositing a thin film on a substrate in a deposition system is described. The method comprises: disposing a gas heating device comprising a plurality of heating element zones in a deposition system, each of the plurality of heating element zones having one or more resistive heating elements; independently controlling a temperature of each of the plurality of heating element zones; providing a substrate on a substrate holder in the deposition system, wherein the substrate holder comprises one or more temperature control zones; providing a film forming composition to the gas heating device coupled to the deposition system; pyrolyzing one or more constituents of the film forming composition using the gas heating device; and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 depicts a schematic view of a deposition system according to an embodiment;

FIG. 2 depicts a schematic view of a gas distribution system according to an embodiment;

FIG. 3A depicts a schematic cross-sectional view of a deposition system according to another embodiment;

FIG. 3B depicts a schematic cross-sectional view of a deposition system according to another embodiment;

FIG. 3C depicts a schematic cross-sectional view of a deposition system according to another embodiment;

FIG. 3D depicts a schematic cross-sectional view of a deposition system according to another embodiment;

FIG. 3E depicts a schematic cross-sectional view of a deposition system according to yet another embodiment;

FIG. 4 provides a top view of a gas heating device according to an embodiment;

FIG. 5A provides a top view of a heating element according to an embodiment;

FIG. 5B provides a side view of the heating element shown in FIG. 4A;

FIG. 6A provides a top view of a dynamic mounting device according to an embodiment;

FIG. 6B provides a side view of the dynamic mounting device shown in FIG. 6A;

FIG. 6C provides a cross-sectional view of the dynamic mounting device shown in FIG. 6A;

FIG. 6D provides a perspective view of the dynamic mounting device shown in FIG. 6A;

FIG. 7 provides a top view of a heating element according to another embodiment;

FIG. 8 illustrates a method of depositing a film on a substrate according to an embodiment; and

FIG. 9 illustrates a method of depositing a film on a substrate according to another embodiment.

DETAILED DESCRIPTION OF SEVERAL EMBODIMENTS

In the following description, in order to facilitate a thorough understanding and for purposes of explanation and not limitation, specific details are set forth, such as a particular geometry of the processing system and descriptions of various components, as well as the methods and processes used therein.

However, one skilled in the relevant art will recognize that the various embodiments may be practiced without one or more of the specific details, or with other replacement and/or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring aspects of various embodiments of the invention. Similarly, for purposes of explanation, specific numbers, materials, and configurations are set forth in order to provide a thorough understanding of the invention. Nevertheless, the invention may be practiced without specific details. Furthermore, it is understood that the various embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale.

Reference throughout this specification to “one embodiment” or “an embodiment” means that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention, but do not denote that they are present in every embodiment. Thus, the appearances of the phrases “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily referring to the same embodiment of the invention. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments. Various additional layers and/or structures may be included and/or described features may be omitted in other embodiments.

As described above, the invention relates to a processing system and method for treating a substrate, and more particularly to a deposition system and method for depositing a thin film using a deposition process, such as a vapor deposition process. Moreover, the invention further relates to a deposition system and method for depositing a thin film using filament-assisted chemical vapor deposition (CVD) or pyrolytic CVD, wherein a gas heating device comprising a heating element array is utilized to pyrolyze a film forming composition.

Therein, the inventors have recognized that high quality, robust thin films may be produced on a substrate when, among other things, enabling the filament-assisted CVD or pyrolytic CVD system to spatially control various process mechanisms or parameters. Some of these process mechanisms may include: (1) modification and/or spatial/temporal control of the reaction zone at the heating element array, e.g., spatial and/or temporal adjustment of the film forming chemistry at the reaction zone; (2) modification and/or spatial/temporal control of the surface reactivity at the substrate or substrate holder, e.g., spatial and/or temporal adjustment of the substrate temperature; and (3) modification and/or spatial/temporal control of the diffusion path length between the reaction zone (i.e., the heating element array) and the substrate or substrate holder.

Referring now to the drawings, wherein like reference numerals designate identical or corresponding parts throughout the several views, FIG. 1 schematically illustrates a deposition system 1 for depositing a thin film, such as a conductive film, a non-conductive film, or a semi-conductive film. For example, the thin film can include a dielectric film, such as a low dielectric constant (low-k) or ultra-low-k dielectric film, or the thin film may include a sacrificial layer for use in air gap dielectrics. Deposition system 1 can include a chemical vapor deposition (CVD) system or thermally-assisted vapor deposition system, wherein a film forming composition is thermally activated or decomposed in order to form a film on a substrate. For example, the deposition system 1 comprises a filament-assisted CVD (FACVD) system or a pyrolytic CVD system.

The deposition system 1 comprises a process chamber 10 having a substrate holder 20 configured to support a substrate 25, upon which the thin film is formed. Furthermore, the substrate holder is configured to control the temperature of the substrate at a temperature suitable for the film forming reactions.

The process chamber 10 is coupled to a film forming composition delivery system 30 configured to introduce a film forming composition to the process chamber 10 through a gas distribution system 40. Furthermore, a gas heating device 45 is coupled to or downstream from the gas distribution system 40 and configured to chemically modify the film forming composition.

The gas heating device 45 comprises a heating element array 55 having a plurality of heating element zones 55 (A,B,C) configured to receive a flow of a film forming composition from the film forming composition delivery system 30 and the gas distribution system 40 across or through the plurality of heating element zones 55 (A,B,C) in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Each of the plurality of heating element zones 55 (A,B,C) comprises one or more heating elements, and is configured electrically independent of one another, wherein each of the plurality of heating element zones 55 (A,B,C) is arranged to interact with at least a portion of the flow, and affect pyrolysis of and delivery of the film forming composition to different process regions of the substrate 25. Although three heating element zones and process regions are illustrated, the heating element array 55 may be configured with less (e.g., two) or more (e.g., four, five, etc.).

As indicated above, the plurality of heating element zones 55 (A,B,C) may facilitate the modification and/or spatial/temporal control of the reaction zone at the heating element array, e.g., spatial and/or temporal adjustment of the film forming chemistry at the reaction zone; and/or the modification and/or spatial/temporal control of the diffusion path length between the reaction zone (i.e., the heating element array) and the substrate or substrate holder. For example, the spacing and/or orientation of the plurality of heating element zones 55 (A,B,C) relative to one another and/or the substrate may be adjusted.

One or more power sources 50 are coupled to the heating element array 55, and configured to provide an electrical signal to each of the plurality of heating element zones 55 (A,B,C). For example, each of the heating element zones 55 (A,B,C) may comprise one or more resistive heating elements. When electrical current flows through and affects heating of the one or more resistive heating elements, the interaction of these heated elements with the film forming composition causes pyrolysis of one or more constituents of the film forming composition.

The process chamber 10 is further coupled to a vacuum pumping system 60 through a duct 62, wherein the vacuum pumping system 60 is configured to evacuate the process chamber 10 and the gas distribution system 40 to a pressure suitable for forming the thin film on the substrate 25 and suitable for pyrolysis of the film forming composition.

The film forming composition delivery system 30 can include one or more material sources configured to introduce a film forming composition to the gas distribution system 40. For example, the film forming composition may include one or more gases, or one or more vapors formed in one or more gases, or a mixture of two or more thereof. The film forming composition delivery system 30 can include one or more gas sources, or one or more vaporization sources, or a combination thereof. Herein vaporization refers to the transformation of a material (normally stored in a state other than a gaseous state) from a non-gaseous state to a gaseous state. Therefore, the terms “vaporization,” “sublimation” and “evaporation” are used interchangeably herein to refer to the general formation of a vapor (gas) from a solid or liquid precursor, regardless of whether the transformation is, for example, from solid to liquid to gas, solid to gas, or liquid to gas.

When the film forming composition is introduced to the gas heating device 45, one or more constituents of the film forming composition are subjected to pyrolysis by the gas heating device 45 described above. The film forming composition can include film precursors that may or may not be fragmented by pyrolysis in the gas heating device 45. The film precursor or precursors may include the principal atomic or molecular species of the film desired to be produced on the substrate. Additionally, the film forming composition can include a reducing agent that may or may not be fragmented by pyrolysis in the gas heating device 45. The reducing agent or agents may assist with the reduction of a film precursor on substrate 25. For instance, the reducing agent or agents may react with a part of or substantially all of the film precursor on substrate 25. Additionally yet, the film forming composition can include a polymerizing agent (or cross-linker) that may or may not be fragmented by pyrolysis in the gas heating device 45. The polymerizing agent may assist with the polymerization of a film precursor or fragmented film precursor on substrate 25.

According to one embodiment, when forming a polymer or copolymer thin film on substrate 25, a film forming composition comprising one or more monomer gases is introduced to the gas heating device 45, i.e., the heating element array 55, having a temperature sufficient to pyrolyze one or more of the monomers and produce a source of reactive species. These reactive species are introduced to and distributed within process space 33 in the vicinity of the upper surface of substrate 25. Substrate 25 is maintained at a temperature lower than that of the gas heating device 45 in order to condensate and induce polymerization of the chemically altered film forming composition at the upper surface of substrate 25.

The film forming composition can include an initiator that may or may not be fragmented by pyrolysis in the gas heating device 45. An initiator or fragmented initiator may assist with the fragmentation of a film precursor, or the polymerization of a film precursor. The use of an initiator can permit higher deposition rates at lower heat source temperatures. For instance, the one or more heating elements can be used to fragment the initiator to produce radical species of the initiator (i.e., a fragmented initiator) that are reactive with one or more of the remaining constituents in the film forming composition. Furthermore, for instance, the fragmented initiator or initiator radicals can catalyze the formation of radicals of the film forming composition. The initiator may include a peroxide. Additionally, for example, the initiator may include: an organic peroxide, such as di-tert-butyl peroxide, di-tert-amyl peroxide, or tert-butyl peroxybenzoate; an azo compound, such as 2,2′-azobisisobutyronitrile; or another monomer, such as perfluorooctane sulfonyl fluoride.

In one example, when forming an organosilicon polymer, monomer gas(es) of an organosilicon precursor is used. Additionally, for example, when forming a fluorocarbon-organosilicon copolymer, monomer gases of a fluorocarbon precursor and organosilicon precursor are used.

In another example, when forming a fluorocarbon-organosilicon copolymer, the initiator can be perfluorooctane sulfonyl fluoride (PFOSF) used in the polymerization of a cyclic vinylmethylsiloxane, such as 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V₃D₃).

In another example, when forming a porous SiCOH-containing film, the film forming composition may comprise a structure-forming material and a pore-generating material. The structure-forming material may comprise diethoxymethylsilane (DEMS) and the pore-generating material may comprise alpha-terpinene (ATRP). The porous SiCOH-containing film may be used as a low dielectric constant (low-k) material.

In another example, when forming a cross-linked neopentyl methacrylate organic glass, the film forming composition may comprise a monomer, a cross-linker, and an initiator. The monomer may comprise trimethylsilylmethyl methacrylate (TMMA), propargyl methacrylate (PMA), cyclopentyl methacrylate (CPMA), neopentyl methacrylate (npMA), and poly (neopentyl methacrylate) (P(npMA)), and the cross-linker may comprise ethylene glycol diacrylate (EGDA), ethylene glycol dimethacrylate (EGDMA), 1,3-propanediol diacrylate (PDDA), or 1,3-propanediol dimethacrylate (PDDMA), or any combination of two or more thereof. Additionally, the initiator may comprise one or more peroxides, one or more hydroperoxides, and/or one or more diazines. Additionally yet, the initiator may comprise a tert-butyl peroxide (TBPO), or a di-tert-butyl peroxide (DTBPO).

In another example, the polymer film may comprise P(npMA-co-EGDA) (poly(neopentyl methacrylate-co-ethylene glycol diacrylate)), and the monomer comprises npMA (neopentyl methacrylate) and the cross-linker comprises EGDA (ethylene glycol diacrylate). The polymer film may be used as a sacrificial air gap material.

In yet another example, silicon-containing films, organic-containing films, and/or organosilicon-containing films may be deposited using any one of the processes and chemical precursors described in pending U.S. patent application Ser. No. 12/730,088, entitled “CHEMICAL VAPOR DEPOSITION METHOD”, Docket No. TDC-017, filed on Mar. 23, 2010.

According to one embodiment, the film forming composition delivery system 30 can include a first material source 32 configured to introduce one or more film precursors to the gas distribution system 40, and a second material source 34 configured to introduce a (chemical) initiator to the gas distribution system 40. Furthermore, the film forming composition delivery system 30 can include additional gas sources configured to introduce an inert gas, a carrier gas, a dilution gas, or an oxidizing agent. For example, the inert gas, carrier gas or dilution gas can include a noble gas, i.e., He, Ne, Ar, Kr, Xe, or Rn.

Referring again to FIG. 1, the power source 50 is configured to provide an electrical signal to the one or more resistive film heating elements in the heating element array 55. For example, the power source 50 can be configured to deliver either DC (direct current) power or AC (alternating current) power. Additionally, for example, the power source 50 may be configured to provide continuous power or variable power. Furthermore, for example, the power source 50 may be configured to modulate the power, or provide pulsed power, stepped power, or ramped power, or any combination of two or more thereof. Furthermore, for example, the power source 50 can be configured to perform at least one of setting, monitoring, adjusting or controlling a power, a voltage, or a current.

Referring still to FIG. 1, a temperature control system 22 can be coupled to the gas distribution system 40, the gas heating device 45, the process chamber 10, and/or the substrate holder 20, and configured to control the temperature of one or more of these components. The temperature control system 22 can include a temperature measurement system configured to measure the temperature of the gas distribution system 40 at one or more locations, the temperature of the gas heating device 45 at one or more locations, the temperature of the process chamber 10 at one or more locations and/or the temperature of the substrate holder 20 at one or more locations. The measurements of temperature can be used to adjust or control the temperature at one or more locations in deposition system 1.

The temperature measuring device, utilized by the temperature measurement system, can include an optical fiber thermometer, an optical pyrometer, a band-edge temperature measurement system as described in pending U.S. patent application Ser. No. 10/168,544, filed on Jul. 2, 2002, the contents of which are incorporated herein by reference in their entirety, or a thermocouple such as a K-type thermocouple. Examples of optical thermometers include: an optical fiber thermometer commercially available from Advanced Energies, Inc., Model No. OR2000F; an optical fiber thermometer commercially available from Luxtron Corporation, Model No. M600; or an optical fiber thermometer commercially available from Takaoka Electric Mfg., Model No. FT-1420.

Alternatively, when measuring the temperature of one or more resistive heating elements, the electrical characteristics of each resistive heating element can be measured. For example, two or more of the voltage, current or power coupled to the one or more resistive heating elements can be monitored in order to measure the resistance of each resistive heating element. The variations of the element resistance can arise due to variations in temperature of the element which affects the element resistivity.

According to program instructions from the temperature control system 22 or the controller 80 or both, the power source 50 can be configured to operate the gas heating device 45, e.g., the one or more heating elements, at a temperature ranging from approximately 100 degrees C. to approximately 600 degrees C. For example, the temperature can range from approximately 200 degrees C. to approximately 550 degrees C. The temperature can be selected based upon the film forming composition and, more particularly, the temperature can be selected based upon a constituent of the film forming composition.

Additionally, according to program instructions from the temperature control system 22 or the controller 80 or both, the temperature of the gas distribution system 40 can be set to a value approximately equal to or less than the temperature of the gas heating device 45, i.e., the one or more heating elements. For example, the temperature can be a value less than or equal to approximately 1200 degrees C. Additionally, for example, the temperature can be a value less than approximately 1000 degrees C. Additionally, for example, the temperature can be a value less than approximately 800 degrees C. Additionally, for example, the temperature can be a value less than approximately 600 degrees C. Additionally, for example, the temperature can be a value less than approximately 550 degrees C. Further yet, for example, the temperature can range from approximately 80 degrees C. to approximately 550 degrees C. The temperature can be selected to be approximately equal to or less than the temperature of the one or more heating elements, and to be sufficiently high to prevent condensation which may or may not cause film formation on surfaces of the gas distribution system and reduce the accumulation of residue.

Additionally yet, according to program instructions from the temperature control system 22 or the controller 80 or both, the temperature of the process chamber 10 can be set to a value less than the temperature of the gas heating device 45, i.e., the one or more heating elements. For example, the temperature can be a value less than approximately 200 degrees C. Additionally, for example, the temperature can be a value less than approximately 150 degrees C. Further yet, for example, the temperature can range from approximately 80 degrees C. to approximately 150 degrees C. However, the temperature may be the same or less than the temperature of the gas distribution system 40. The temperature can be selected to be less than the temperature of the one or more resistive film heating elements, and to be sufficiently high to prevent condensation which may or may not cause film formation on surfaces of the process chamber and reduce the accumulation of residue.

Once film forming composition enters the process space 33, the film forming composition adsorbs on the substrate surface, and film forming reactions proceed to produce a thin film on the substrate 25. According to program instructions from the temperature control system 22 or the controller 80 or both, the substrate holder 20 is configured to set the temperature of substrate 25 to a value less than the temperature of the gas heating device 45, the temperature of the gas distribution system 40, and the process chamber 10. For example, the substrate temperature can range up to approximately 80 degrees C. Additionally, the substrate temperature can be approximately room temperature. For example, the substrate temperature can range up to approximately 25 degrees C. However, the temperature may be less than or greater than room temperature.

The substrate holder 20 may facilitate the modification and/or spatial/temporal control of the surface reactivity at the substrate or substrate holder, e.g., spatial and/or temporal adjustment of the substrate temperature.

The substrate holder 20 comprises one or more temperature control elements 21 coupled to the temperature control system 22. The temperature control system 22 can include a substrate heating system, or a substrate cooling system, or both. For example, substrate holder 20 can include a substrate heating element or substrate cooling element (not shown) beneath the surface of the substrate holder 20. For instance, the heating system or cooling system can include a re-circulating fluid flow that receives heat from substrate holder 20 and transfers heat to a heat exchanger system (not shown) when cooling, or transfers heat from the heat exchanger system to the substrate holder 20 when heating. The cooling system or heating system may include heating/cooling elements, such as resistive heating elements, or thermo-electric heaters/coolers located within substrate holder 20. Additionally, the heating elements or cooling elements or both can be arranged in more than one separately controlled temperature zone. The substrate holder 20 may have two thermal zones, including an inner zone and an outer zone. The temperatures of the zones may be controlled by heating or cooling the substrate holder thermal zones separately.

Additionally, the substrate holder 20 comprises a substrate clamping system 23 (e.g., electrical or mechanical clamping system) to clamp the substrate 25 to the upper surface of substrate holder 20. For example, substrate holder 20 may include an electrostatic chuck (ESC).

Furthermore, the substrate holder 20 can facilitate the delivery of heat transfer gas to the back-side of substrate 25 via a backside gas supply system 24 to improve the gas-gap thermal conductance between substrate 25 and substrate holder 20. Such a system can be utilized when temperature control of the substrate is required at elevated or reduced temperatures. For example, the backside gas system can comprise a two-zone gas distribution system, wherein the backside gas (e.g., helium) pressure can be independently varied between the center and the edge of substrate 25.

As an example, the substrate holder may include any one of the temperature controlling elements described in U.S. Pat. No. 6,740,853, entitled “Multi-zone Resistance Heater”, the entire content of which is incorporated herein in its entirety.

Vacuum pumping system 60 can include a turbo-molecular vacuum pump (TMP) capable of a pumping speed up to approximately 5000 liters per second (and greater) and a gate valve for throttling the chamber pressure. For example, a 1000 to 3000 liter per second TMP can be employed. TMPs can be used for low pressure processing, typically less than approximately 1 Torr. For high pressure processing (i.e., greater than approximately 1 Torr), a mechanical booster pump and dry roughing pump can be used. Furthermore, a device for monitoring chamber pressure (not shown) can be coupled to the process chamber 10. The pressure monitoring device can be, for example, a Type 628B Baratron absolute capacitance manometer commercially available from MKS Instruments, Inc. (Andover, Mass.).

Referring still to FIG. 1, the deposition system 1 can further comprise a controller 80 that comprises a microprocessor, memory, and a digital I/O port capable of generating control voltages sufficient to communicate and activate inputs to deposition system 1 as well as monitor outputs from deposition system 1. Moreover, controller 80 can be coupled to and can exchange information with the process chamber 10, the substrate holder 20, the temperature control system 22, the film forming composition delivery system 30, the gas distribution system 40, the gas heating device 45, and the vacuum pumping system 60, as well as the backside gas delivery system (not shown), and/or the electrostatic clamping system (not shown). A program stored in the memory can be utilized to activate the inputs to the aforementioned components of deposition system 1 according to a process recipe in order to perform the method of depositing a thin film.

Controller 80 may be coupled to the one or more power sources 50 of gas heating device 45, and configured to control the electrical signal to each of the plurality of heating element zones 55 (A,B,C) of the heating element array 55. Therein, controller 80 may be configured to control one or more electrical parameters including current, voltage, or power, or any combination of two or more thereof. Additionally, controller 80 may be coupled to one or more flow control devices of the gas distribution system 40, and configured to control the flow rate of film forming composition or other process gas to each one of the plurality of heating element zones 55 (A,B,C) of the heating element array 55. Furthermore, controller 80 may be coupled to one or more temperature control elements in substrate holder 20, and configured to control the temperature of different regions of substrate 25.

Controller 80 may be locally located relative to the deposition system 1, or it may be remotely located relative to the deposition system 1 via an internet or intranet. Thus, controller 80 can exchange data with the deposition system 1 using at least one of a direct connection, an intranet, or the internet. Controller 80 may be coupled to an intranet at a customer site (i.e., a device maker, etc.), or coupled to an intranet at a vendor site (i.e., an equipment manufacturer). Furthermore, another computer (i.e., controller, server, etc.) can access controller 80 to exchange data via at least one of a direct connection, an intranet, or the internet.

The deposition system 1 can be periodically cleaned using an in-situ cleaning system (not shown) coupled to, for example, the process chamber 10 or the gas distribution system 40. Per a frequency determined by the operator, the in-situ cleaning system can perform routine cleanings of the deposition system 1 in order to remove accumulated residue on internal surfaces of deposition system 1. The in-situ cleaning system can, for example, comprise a radical generator configured to introduce a chemical radical capable of chemically reacting and removing such residue. Additionally, for example, the in-situ cleaning system can, for example, include an ozone generator configured to introduce a partial pressure of ozone. For instance, the radical generator can include an upstream plasma source configured to generate oxygen or fluorine radical from oxygen (O₂), nitrogen trifluoride (NF₃), O₃, XeF₂, ClF₃, or C₃F₈ (or, more generally, C_(x)F_(y)), respectively. The radical generator can include an ASTRON® reactive gas generator, commercially available from MKS Instruments, Inc., ASTeX® Products (90 Industrial Way, Wilmington, Mass. 01887).

Referring now to FIG. 2, a gas distribution system 200 is illustrated according to an embodiment. The gas distribution system 200 comprises a housing 240 configured to be coupled to or within a process chamber of a deposition system (such as process chamber 10 of deposition system 1 in FIG. 1), and a gas distribution plate 241 configured to be coupled to the housing 240, wherein the combination form a plenum 242. The gas distribution plate 241 may be optional. The gas distribution system 200 may be thermally insulated from the process chamber, or it may not be thermally insulated from the process chamber.

The gas distribution system 200 is configured to receive a film forming composition into the plenum 242 from a film forming composition delivery system (not shown) and distribute the film forming composition in the process chamber. For example, the gas distribution system 200 can be configured to receive one or more constituents of a film forming composition 232 and an optional initiator 234 into plenum 242 from the film forming composition delivery system. The one or more constituents of the film forming composition 232 and the optional initiator 234 may be introduced to plenum 242 separately as shown, or they may be introduced through the same opening. Alternatively, the gas distribution system 200 may be configured to receive a cleaning fluid, solution, gas, etc. into plenum 242, replacing the film forming composition 232 and/or the optional initiator 234 when cleaning the deposition system, as discussed above in FIG. 1.

The gas distribution plate 241 comprises a plurality of openings 244 arranged to introduce and distribute the film forming composition from plenum 242 to a process space 233 proximate a substrate (not shown) upon which a film is to be formed. For example, gas distribution plate 241 comprises one or more outlets 246 configured to face the upper surface of a substrate.

Furthermore, the gas distribution system 200 comprises a gas heating device 250 having a heating element array with a plurality of heating element zones 252 (A-C). Each of the plurality of heating element zones 252 (A-C) includes one or more heating elements coupled to a power source 254, and configured to receive an electrical signal from the power source 254. The plurality of heating element zones 252 (A-C) are located at the outlet 246 of the gas distribution system 200, such that they may interact with any constituent of the film forming composition, or all of the constituents of the film forming composition including the optional initiator.

As described above, each of the plurality of heating element zones 252 (A-C) can comprise one or more resistive heating elements. For example, the one or more resistive heating elements may include a metal-containing ribbon or a metal-containing wire. Furthermore, for example, the one or more resistive heating elements can be composed of a resistive metal, a resistive metal alloy, a resistive metal nitride, or a combination of two or more thereof.

When the power source 254 couples electrical power to the plurality of heating element zones 252 (A-C), the plurality of heating element zones 252 (A-C) may be elevated to a temperature sufficient to pyrolyze one or more constituents of the film forming composition. Power source 254 may include a direct current (DC) power source, or it may include an alternating current (AC) power source. Power source 254 may be configured to couple electrical power to the plurality of heating element zones 252 (A-C) through a direct electrical connection to the one or more heating elements. Alternatively, power source 254 may be configured to couple electrical power to the plurality of heating element zones 252 (A-C) through induction.

The one or more openings 244 formed in gas distribution plate 241 can include one or more orifices or one or more slots or a combination thereof. The one or more openings 244 can be distributed on the gas distribution plate 241 in a rectilinear pattern. Alternatively, the one or more openings 244 can be distributed on the gas distribution plate 241 in a circular pattern (e.g., orifices are distributed in a radial direction or angular direction or both). When the plurality of heating element zones 252 (A-C) are located at the outlet 246 of the gas distribution system 200, each heating element can be positioned such that the flow of film forming composition and/or the optional initiator exiting from the one or more openings 244 of gas distribution plate 241 pass by or over at least one heating element.

Additionally, the plurality of openings 244 can be distributed in various density patterns on the gas distribution plate 241. For example, more openings can be formed near the center of the gas distribution plate 241 and fewer openings can be formed near the periphery of the gas distribution plate 241. Alternatively, for example, more openings can be formed near the periphery of the gas distribution plate 241 and fewer openings can be formed near the center of the gas distribution plate 241. Additionally yet, the size of the openings can vary on the gas distribution plate 241. For example, larger openings can be formed near the center of the gas distribution plate 241 and smaller openings can be formed near the periphery of the gas distribution plate 241. Alternatively, for example, smaller openings can be formed near the periphery of the gas distribution plate 241 and larger openings can be formed near the center of the gas distribution plate 241.

Referring still to FIG. 2, the gas distribution system 200 may comprise an intermediate gas distribution plate 260 coupled to housing 240 such that the combination of housing 240, intermediate gas distribution plate 260 and gas distribution plate 241 form an intermediate plenum 245 separate from plenum 242 and between the intermediate gas distribution plate 260 and the gas distribution plate 241. The intermediate gas distribution plate 260 may be optional. The gas distribution system 200 is configured to receive a film forming composition into the plenum 242 from a film forming composition delivery system (not shown) and distribute the film forming composition through the intermediate plenum 245 to the process chamber.

The intermediate gas distribution plate 260 comprises a plurality of openings 262 arranged to distribute and introduce the film forming composition to the intermediate plenum 245. The plurality of openings 262 can be shaped, arranged, distributed or sized as described above. The openings 262 in the intermediate gas distribution plate 260 may or may not be aligned with the plurality of heating element zones 252(A-C).

The gas distribution system 200 may further comprise a gas distribution manifold 270 coupled to housing 240 such that the combination of housing 240 and gas distribution manifold 270 form a second intermediate plenum 243 separate from plenum 242 and between the intermediate gas distribution plate 260 and the gas distribution manifold 270. The gas distribution system 200 is configured to receive a film forming composition into the plenum 242 from a film forming composition delivery system (not shown) and distribute the film forming composition through the second intermediate plenum 243 and the intermediate plenum 245 to the process chamber. The gas distribution manifold 270 comprises a one or more conduits 272 configured to distribute and introduce the film forming composition to the second intermediate plenum 243 through an annular groove 274. The gas distribution manifold 270 may be optional.

Referring now to FIG. 3A, a schematic cross-sectional view of a deposition system 1001 is depicted according to another embodiment. The deposition system 1001 comprises a substrate holder 1020 configured to support a substrate 1025, upon which the thin film is formed. Furthermore, the substrate holder is configured to control the temperature of the substrate at a temperature suitable for the film forming reactions. The deposition system 1001 further comprises a film forming composition delivery system 1030 configured to introduce a film forming composition to the substrate 1025 through a gas distribution system 1040. Further yet, the deposition system 1001 comprises a gas heating device 1045 coupled to or mounted downstream from the gas distribution system 1040 and configured to chemically modify the film forming composition.

The gas heating device 1045 comprises a heating element array 1055 having a plurality of heating element zones 1055 (A,B,C) configured to receive a flow of a film forming composition from the film forming composition delivery system 1030 and the gas distribution system 1040 across or through the plurality of heating element zones 1055 (A,B,C) in order cause pyrolysis of one or more constituents of the film forming composition when heated. Each of the plurality of heating element zones 1055 (A,B,C) comprises one or more heating elements, and is configured electrically independent of one another, wherein each of the plurality of heating element zones is arranged to interact with at least a portion of the flow, and affect pyrolysis of and delivery of the film forming composition to different regions of the substrate 25.

One or more power sources 1050 are coupled to the gas heating device 1045, and configured to provide an electrical signal to each of the plurality of heating element zones 1055 (A,B,C) of heating element array 1055. For example, each of the plurality of heating element zones 1055 (A,B,C) of heating element array 1055 can comprise one or more resistive heating elements. When electrical current flows through and effects heating of the one or more resistive heating elements, the interaction of these heated elements with the film forming composition causes pyrolysis of one or more constituents of the film forming composition. As shown in FIG. 3A, the one or more heating elements for each of the plurality of heating element zones 1055 (A,B,C) may be arranged in a plane, i.e., planar arrangement. Alternatively, the one or more heating elements for each of the plurality of heating element zones 1055 (A,B,C) may not be arranged in a plane, i.e., non-planar arrangement.

As shown in FIG. 3A, the plurality of heating element zones 1055 (A,B,C) in the heating element array 1055 may be arranged within a plane 1034 substantially parallel with substrate 1025 and spaced away from substrate 1025 a distance 1035. Therein, a flow of film forming composition enters the deposition system 1001 through gas distribution system 1040, flows through heating element array 1055 into process space 1033, and flows downward through process space 1033 to substrate 1025 in a direction substantially normal to substrate 1025, i.e. a stagnation flow pattern. At least a portion of the flow of the film forming composition flows through each of the plurality of the heating element zones 1055 (A,B,C). The gas distribution system 1040 may be zoned in a manner such that an amount of film forming composition flowing to each of the plurality of heating element zones 1055 (A,B,C) is controllable.

The plurality of heating element zones 1055 (A,B,C) correspond to different process regions 1033 (A-C) of the substrate 1025, respectively. For example, heating element zone 1055A may correspond to process region 1033A located at a substantially central region of substrate 1025. Additionally, for example, heating element zones 1055B and 1055C may correspond to process regions 1033B and 1033C, respectively, located at a substantially edge or peripheral region of substrate 1025. Therefore, independent control of each of the plurality of heating element zones 1055 (A-C) and/or control of the amount of film forming composition directed to each of the plurality of heating element zones 1055 (A-C) may be used to control processing parameters in each of the process regions 1033 (A-C).

Corresponding to the plurality of heating element zones 1055 (A-C), the substrate holder 1020 may comprise a plurality of temperature control zones for controlling a temperature of substrate 1025. The temperature control zones may align with process regions 1033 (A-C) and/or the plurality of heating element zones 1055 (A-C).

For example, the substrate holder 1020 may comprise one or more temperature control elements 1022 (A-C) coupled to a temperature control system 1022 and corresponding to the plurality of temperature control zones for substrate 1025. The temperature control system 1022 can include a substrate heating system, or a substrate cooling system, or both. For example, temperature control elements 1022 (A-C) may include substrate heating elements and/or substrate cooling elements embedded within the substrate holder 1020. The temperature control elements 1022 (A-C) may correspond to the plurality of temperature control zones for substrate 1025 and the process regions 1033 (A-C). The temperatures of each region of substrate holder 1020 may be controlled by heating or cooling each region in the substrate holder 1025.

Additionally, for example, the substrate holder 1020 may comprise a substrate clamping system 1023A (e.g., electrical or mechanical clamping system) to clamp the substrate 1025 to the upper surface of substrate holder 1020. For example, substrate holder 1020 may include an electrostatic chuck (ESC). An ESC control system 1023 may be utilized to operate and control substrate clamping system 1023A.

Furthermore, for example, the substrate holder 1020 may facilitate the delivery of heat transfer gas to the back-side of substrate 1025 via a backside gas supply system 1024 to improve the gas-gap thermal conductance between substrate 1025 and substrate holder 1020. Such a system can be utilized when temperature control of the substrate is required at elevated or reduced temperatures. As shown in FIG. 3A, the backside gas supply system 1024 may comprise one or more heat transfer gas supply zones 1024 (A-C) to controllably adjust heat transfer at the plurality of temperature control zones for controlling the temperature of substrate 1025. The heat transfer gas supply zones 1024 (A-C) may correspond to the plurality of heating element zones 1055 (A-C) and the process regions 1033 (A-C). The temperatures of each region of substrate 1025 may be controlled by independently varying the backside (e.g., helium, He) pressure at each of the heat transfer gas supply zones 1024 (A-C).

Referring still to FIG. 3A, a controller 1080 is coupled to the film forming composition delivery system 1030, the one or more power sources 1050, the temperature control system 1022, the ESC control system 1023, and/or the backside gas supply system 1024 to perform at least one of monitoring, adjusting, or controlling a processing parameter at different regions of substrate 1025. For example, one or more of the aforementioned elements may be used to control film deposition uniformity on substrate 1025.

Referring now to FIG. 3B, a schematic cross-sectional view of a deposition system 2001 is depicted according to another embodiment. The deposition system 2001 comprises a gas heating device 2045 coupled to or mounted downstream from the gas distribution system 1040 and configured to chemically modify the film forming composition. The gas heating device 2045 comprises a heating element array 2055 having a plurality of heating element zones 2055 (A,B,C).

Each of the plurality of heating element zones 2055 (A,B,C) of heating element array 2055 can comprise one or more resistive heating elements. When electrical current flows through and effects heating of the one or more resistive heating elements, the interaction of these heated elements with the film forming composition causes pyrolysis of one or more constituents of the film forming composition. As shown in FIG. 3B, the one or more heating elements for each of the plurality of heating element zones 2055 (A,B,C) may be arranged in a plane, i.e., planar arrangement. Alternatively, the one or more heating elements for each of the plurality of heating element zones 2055 (A,B,C) may not be arranged in a plane, i.e., non-planar arrangement.

As shown in FIG. 3B, at least one of the plurality of heating element zones 2055 (A,B,C) in the heating element array 2055 may be arranged within a first plane 2034A, while at least another of the plurality of heating element zones 2055 (A,B,C) in the heating element array 2055 may be arranged within a second plane 2034B. The first and second planes 2034A, 2034B may be substantially parallel with substrate 1025 and spaced away from substrate 1025 a distance 2035A, 2035B, respectively. However, the first plane 2034A and/or the second plane 2034B need not be oriented parallel with substrate 1025. Therein, a flow of film forming composition enters the deposition system 2001 through gas distribution system 1040, flows through heating element array 2055 into process space 1033, and flows downward through process space 1033 to substrate 1025 in a direction substantially normal to substrate 1025, i.e. a stagnation flow pattern.

The plurality of heating element zones 2055 (A,B,C) correspond to different process regions 1033 (A-C) of the substrate 1025, respectively. For example, heating element zone 2055A may correspond to process region 1033A located at a substantially central region of substrate 1025. Additionally, for example, heating element zones 2055B and 2055C may correspond to process regions 1033B and 1033C, respectively, located at a substantially edge or peripheral region of substrate 1025. By varying the location of the first plane 2034A and the second plane 2034B, the distances 2035A and 2035B, respectively, between the reaction zone at each of the plurality of heating element zones 2055 (A-C) and substrate 1025 may be varied to provide additional control of the processing parameters at each of the process regions 1033 (A-C).

Referring now to FIG. 3C, a schematic cross-sectional view of a deposition system 3001 is depicted according to another embodiment. The deposition system 3001 comprises a gas heating device 3045 coupled to or mounted downstream from the gas distribution system 1040 and configured to chemically modify the film forming composition. The gas heating device 3045 comprises a heating element array 3055 having a plurality of heating element zones 3055 (A,B,C).

As shown in FIG. 3C, a position of at least one of the plurality of heating element zones 3055 (A,B,C) in the heating element array 3055 may be adjusted via a positioning system 3060. For example, at least one of the plurality of heating element zones 3055 (A,B,C) in the heating element array 3055 may be arranged within a first plane 3034A, while at least another of the plurality of heating element zones 3055 (A,B,C) in the heating element array 3055 may be arranged within a second plane 3034B. The first and second planes 3034A, 3034B may be substantially parallel with substrate 1025 and spaced away from substrate 1025 a distance 3035A, 3035B, respectively. However, the first plane 3034A and/or the second plane 3034B need not be oriented parallel with substrate 1025. Therein, a flow of film forming composition enters the deposition system 3001 through gas distribution system 1040, flows through heating element array 3055 into process space 1033, and flows downward through process space 1033 to substrate 1025 in a direction substantially normal to substrate 1025, i.e. a stagnation flow pattern.

The plurality of heating element zones 3055 (A,B,C) correspond to different process regions 1033 (A-C) of the substrate 1025, respectively. For example, heating element zone 3055A may correspond to process region 1033A located at a substantially central region of substrate 1025. Additionally, for example, heating element zones 3055B and 3055C may correspond to process regions 1033B and 1033C, respectively, located at a substantially edge or peripheral region of substrate 1025. By varying the location of the first plane 3034A and the second plane 3034B, the distances 3035A and 3035B, respectively, between the reaction zone at each of the plurality of heating element zones 3055 (A-C) and substrate 1025 may be varied to provide additional control of the processing parameters at each of the process regions 1033(A-C).

The positioning system 3060, via input from controller 1080 for example, may adjust the position of any one or more of the plurality of heating element zones 3055 (A-C) in process space 1033. The position of each of the plurality of heating element zones 3055 (A-C) may be adjusted via any translational and/or rotational degree of freedom. For example, the position of each of the plurality of heating element zones 3055 (A-C) may be adjusted relative to substrate 1025.

Referring now to FIG. 3D, a schematic cross-sectional view of a deposition system 4001 is depicted according to another embodiment. The deposition system 4001 comprises a gas heating device 4045 coupled to or mounted downstream from the gas distribution system 1040 and configured to chemically modify the film forming composition. The gas heating device 4045 comprises a heating element array 4055 having a plurality of heating element zones 4055 (A,B,C).

Each of the plurality of heating element zones 4055 (A,B,C) of heating element array 4055 can comprise one or more resistive heating elements. When electrical current flows through and effects heating of the one or more resistive heating elements, the interaction of these heated elements with the film forming composition causes pyrolysis of one or more constituents of the film forming composition. As shown in FIG. 3D, the one or more heating elements for each of the plurality of heating element zones 4055 (A,B,C) may be arranged in a plane, i.e., planar arrangement. Alternatively, the one or more heating elements for each of the plurality of heating element zones 4055 (A,B,C) may not be arranged in a plane, i.e., non-planar arrangement.

As shown in FIG. 3D, at least one of the plurality of heating element zones 4055 (A,B,C) in the heating element array 4055 may be oriented differently relative to substrate 1035 than that of another of the plurality of heating element zones 4055 (A,B,C) in the heating element array 4055. For example, heating elements zones 4055C and 4055B are tilted relative to heating element 4055A and substrate 1025. Other configurations, orientations, and/or arrangements are contemplated.

Additionally, as shown in FIG. 3D, at least one of the plurality of heating element zones 4055 (A,B,C) in the heating element array 4055 may be arranged within a first plane 4034A, while at least another of the plurality of heating element zones 4055 (A,B,C) in the heating element array 4055 may be arranged or centered within a second plane 4034B. The first and second planes 4034A, 4034B may be substantially parallel with substrate 1025 and spaced away from substrate 1025 a distance 4035A, 4035B, respectively. However, the first plane 4034A and/or the second plane 4034B need not be oriented parallel with substrate 1025, as shown. Therein, a flow of film forming composition enters the deposition system 4001 through gas distribution system 1040, flows through heating element array 4055 into process space 1033, and flows downward through process space 1033 to substrate 1025 in a direction substantially normal to substrate 1025, i.e. a stagnation flow pattern.

The plurality of heating element zones 4055 (A,B,C) correspond to different process regions 1033 (A-C) of the substrate 1025, respectively. For example, heating element zone 4055A may correspond to process region 1033A located at a substantially central region of substrate 1025. Additionally, for example, heating element zones 4055B and 4055C may correspond to process regions 1033B and 1033C, respectively, located at a substantially edge or peripheral region of substrate 1025. By varying the location of the first plane 4034A and the second plane 4034B and/or the orientation of the heating element zones 4055 (A,B,C), the distances 4035A and 4035B, respectively, between the reaction zone at each of the plurality of heating element zones 4055 (A-C) and substrate 1025 may be varied to provide additional control of the processing parameters at each of the process regions 1033 (A-C).

Referring now to FIG. 3E, a schematic cross-sectional view of a deposition system 5001 is depicted according to another embodiment. The deposition system 5001 comprises a gas heating device 5045 coupled to or mounted downstream from the gas distribution system 1040 and configured to chemically modify the film forming composition. The gas heating device 5045 comprises a heating element array 5055 having a plurality of heating element zones 5055 (A,B,C).

Each of the plurality of heating element zones 5055 (A,B,C) of heating element array 5055 can comprise one or more resistive heating elements. When electrical current flows through and effects heating of the one or more resistive heating elements, the interaction of these heated elements with the film forming composition causes pyrolysis of one or more constituents of the film forming composition. As shown in FIG. 3E, the one or more heating elements for each of the plurality of heating element zones 5055 (A,B,C) may not be arranged in a plane, i.e., non-planar arrangement. Alternatively, the one or more heating elements for each of the plurality of heating element zones 5055 (A,B,C) may be arranged in a plane, i.e., planar arrangement.

As shown in FIG. 3E, at least one of the plurality of heating element zones 5055 (A,B,C) in the heating element array 5055 may be oriented differently relative to substrate 1035 than that of another of the plurality of heating element zones 5055 (A,B,C) in the heating element array 5055. For example, heating elements zones 5055C and 5055B are tilted relative to heating element 5055A and substrate 1025. Other configurations, orientations, and/or arrangements are contemplated.

Additionally, as shown in FIG. 3E, at least one of the plurality of heating element zones 5055 (A,B,C) in the heating element array 5055 may be shaped differently than that of another of the plurality of heating element zones 5055 (A,B,C) in the heating element array 5055. For example, heating elements zones 5055C and 5055B include one or more resistive heating elements arranged on a non-planar, three-dimensional surface relative to heating element 5055A and substrate 1025, i.e., non-planar arrangement. Other shapes, configurations, orientations, and/or arrangements are contemplated.

Furthermore, as shown in FIG. 3E, at least one of the plurality of heating element zones 5055 (A,B,C) in the heating element array 5055 may be arranged within a first plane 4034A, while at least another of the plurality of heating element zones 5055 (A,B,C) in the heating element array 5055 may be arranged or centered within a second plane 5034B. The first and second planes 5034A, 5034B may be substantially parallel with substrate 1025 and spaced away from substrate 1025 a distance 5035A, 5035B, respectively. However, the first plane 5034A and/or the second plane 5034B need not be oriented parallel with substrate 1025, as shown. Therein, a flow of film forming composition enters the deposition system 5001 through gas distribution system 1040, flows through heating element array 5055 into process space 1033, and flows downward through process space 1033 to substrate 1025 in a direction substantially normal to substrate 1025, i.e. a stagnation flow pattern.

The plurality of heating element zones 5055 (A,B,C) correspond to different process regions 1033 (A-C) of the substrate 1025, respectively. For example, heating element zone 5055A may correspond to process region 1033A located at a substantially central region of substrate 1025. Additionally, for example, heating element zones 5055B and 5055C may correspond to process regions 1033B and 1033C, respectively, located at a substantially edge or peripheral region of substrate 1025. By varying the location of the first plane 5034A and the second plane 5034B and/or the orientation of the heating element zones 5055 (A,B,C), the distances 5035A and 5035B, respectively, between the reaction zone at each of the plurality of heating element zones 5055 (A-C) and substrate 1025 may be varied to provide additional control of the processing parameters at each of the process regions 1033 (A-C).

Although several embodiments are provided, other shapes, configurations, orientations, and/or arrangements are contemplated. The location/spacing, orientation, and/or shape of the heating element zones may depend on the type of substrate being processed. For example, the substrate may include a circular substrate or semiconductor wafer. Alternatively, other substrates and configurations may be used. For example, rectangular substrates, such as large glass substrates or liquid crystal displays (LCDs), may be processed in either a horizontal or vertical arrangement within the processing space. In yet another arrangement, a flexible substrate may be processed by running roller-to-roller in a known manner where the substrate holder may be configured as a roller.

Referring now to FIG. 4, a top view of a gas heating device 300 is presented according to an embodiment. The gas heating device 300 is configured to heat one or more constituents of a film forming composition. The gas heating device 300 comprises a heating element array 340 having a plurality of heating element zones 340 (A-C), each of which is electrically independent of one another. Each of the plurality of heating element zones comprises one or more heat sources 320, wherein each heat source 320 comprises a resistive heating element 330 configured to receive an electrical current from one or more power sources. Additionally, the gas heating device 300 comprises a mounting structure 310 configured to support the one or more resistive heating elements 330. Furthermore, the one or more heat sources 320 may be mounted between the mounting structure 310 and an auxiliary mounting structure 312 (see FIG. 5B). Mounting structure 310 may include a single structure for all of the heating element zones 340 (A-C). Alternatively, mounting structure 310 may include multiple structures independently arranged for each heating element zone 340 (A-C).

As shown in FIG. 4, the gas heating device 300 comprises one or more static mounting devices 326 coupled to the mounting structure 310 and configured to fixedly couple the one or more resistive heating elements 330 to the mounting structure 310, and the gas heating device 300 comprises one or more dynamic mounting devices 324 coupled to the mounting structure 310 and configured to automatically compensate for changes in a length of each of the one or more resistive heating elements 330. Further yet, the one or more dynamic mounting devices 324 may substantially reduce slippage between the one or more resistive heating elements 330 and the one or more dynamic mounting devices 324.

The one or more resistive heating elements 330 may be electrically coupled in series, as shown in FIG. 4, using electrical interconnects 342, wherein electrical current is supplied to the serial connection of one or more resistive heating elements 330 via, for example, connection of a first terminal 341 (A-C) to the power source and a second terminal 344 (A-C) to electrical ground for the power source. Alternatively, the one or more resistive heating elements 330 may be electrically coupled in parallel.

Referring now to FIGS. 5A and 5B, a top view and a side view of heat source 320, respectively, is presented according to an embodiment. The resistive heating element 330 comprises a first end 334 fixedly coupled to one of the one or more static mounting devices 326, a second end 336 fixedly coupled to one of the one or more static mounting devices 326, a bend 333 coupled to one of the one or more dynamic mounting devices 324 and located between the first end 334 and the second end 336, a first straight section 332 extending between the first end 334 and the bend 333, and a second straight section 331 extending between the second end 336 and the bend 333. The first end 334 and the second end 336 may be fixedly coupled to the same static mounting device or different static mounting devices.

As illustrated in FIGS. 5A and 5B, the first straight section 332 and the second straight section 331 may be substantially the same length. When the first straight section 332 and the second straight section 331 are substantially the same length, the respective changes in length for the first straight section 332 and the second straight section 331 due to temperature variations are substantially the same. Alternatively, the first straight section 332 and the second straight section 331 may be different lengths.

Also, as illustrated in FIGS. 5A and 5B, the bend 333 comprises a 180 degree bend. Alternatively, the bend 333 comprises a bend ranging from greater than 0 degrees to less than 360 degrees.

The static mounting device 326 is fixedly coupled to the mounting structure 310. The dynamic mounting device 324 is configured to adjust in a linear direction 325 parallel with the first straight section 332 and the second straight section 331 in order to compensate for changes in the length of the first straight section 332 and the length of the second straight section 331. In this embodiment, the dynamic mounting device 324 can alleviate slack or sagging in the resistive heating element 330, and it may substantially reduce or minimize slippage between the resistive heating element 330 and the dynamic mounting device 324 (such slippage may cause particle generation and/or contamination). Furthermore, the dynamic mounting device 324 comprises a thermal break 327 configured to reduce heat transfer between the dynamic mounting device 324 and the mounting structure 310.

Referring now to FIGS. 6A, 6B, 6C, and 6D, a top view, a side view, a cross-sectional view, and a perspective view of the dynamic mounting device 324, respectively, is presented according to an embodiment. The dynamic mounting device 324 comprises a static structure 350 fixedly coupled to the mounting structure 310. The static structure 350 includes a guide feature 352 and a helical spring 370 configured to be received by the guide feature 352 of the static structure 350. The dynamic mounting device 324 further comprises a dynamic structure 360 dynamically coupled to the mounting structure 310. The dynamic structure 360 comprises a capture member 362 configured to retain at least one of the one or more resistive heating elements 330, a slidable member 363 configured to slidably mate with the static structure 350 and compress the helical spring 370 against the static structure 350 when loaded with the at least one of the one or more resistive heating elements 330, and the thermal break 327 disposed between the capture member 362 and the slidable member 363. The restoring force of the helical spring 370 may maintain the resistive heating element 330 under tensile stress and/or alleviate the resistive heating element 330 from slack or sagging.

As shown in FIG. 6A, the slidable member 363 comprises a load member 364 having a load surface 364′ configured to contact the helical spring 370 and a pair of guide rail members 366 extending from the load member 364, wherein each of the pair of guide rail members 366 extend on opposite sides of the static structure 350 and having guide surfaces parallel with opposing faces of the static structure 350. Moreover, the mounting structure 310 may comprise a groove 314 configured to receive the base of the dynamic structure 360 and further guide its motion.

As shown in FIG. 6B, the capture member 362 comprises a shaped surface 362′ configured to contact bend (not shown) of the resistive heating element 330. Additionally, the capture member 362 comprises a lip 362″ configured to prevent the resistive heating element 330 from slipping off of the capture member 362.

Referring again to FIGS. 5A and 5B, the static mounting device 326, the dynamic mounting device 324, or both the static mounting device 326 and the dynamic mounting device 324 may be fabricated from an electrically non-conductive or insulating material. Additionally, the static mounting device 326, the dynamic mounting device 324, or both the static mounting device 326 and the dynamic mounting device 324 may be fabricated from a thermally insulating material. Furthermore, the static mounting device 326, the dynamic mounting device 324, or both the static mounting device 326 and the dynamic mounting device 324 may be fabricated from a ceramic or a plastic. Further yet, for example, the static mounting device 326, the dynamic mounting device 324, or both the static mounting device 326 and the dynamic mounting device 324 may be fabricated from quartz, silicon nitride, silicon carbide, sapphire, alumina, aluminum nitride, polytetrafluoroethylene, polyimide, etc.

The static structure 350, the dynamic structure 360, or both the static structure 350 and the dynamic structure 360 may be fabricated from an electrically non-conductive or insulating material. Additionally, the static structure 350, the dynamic structure 360, or both the static structure 350 and the dynamic structure 360 may be fabricated from a thermally insulating material. Furthermore, the static structure 350, the dynamic structure 360, or both the static structure 350 and the dynamic structure 360 may be fabricated from a ceramic or a plastic. Further yet, for example, the static structure 350, the dynamic structure 360, or both the static structure 350 and the dynamic structure 360 may be fabricated from quartz, silicon nitride, silicon carbide, sapphire, alumina, aluminum nitride, polytetrafluoroethylene, polyimide, etc.

As shown in FIGS. 6A, 6B, and 6C, a cross-sectional view of the thermal break 327 is provided. The thermal break 327 comprises one or more arms 329 extending between the slidable member 363 and the capture member 362. For example, the one or more arms 329 may include two reduced cross-sectional area arms extending from the pair of guide rail members 366 of slidable member 363 to the capture member 362. The cross-sectional dimensions, 329 a (width) and 329 b (height), and the length, 329 c, of the thermal break 327 may be selected to reduce or minimize the heat transfer coefficient (h) between the capture member 362 and the slidable member 363, wherein h=kA/l (k represents the thermal conductivity of the thermal break, A represents the cross-sectional area of the thermal break, and l represents the length of the thermal break). Additionally, the cross-sectional dimensions, 329 a (width) and 329 b (height), may be selected to maintain the mechanical integrity of the thermal break 327. The cross-sectional shape of the thermal break 327, e.g., each of the one or more arms 329, may be square, rectangular, triangular, circular, or any arbitrary shape.

According to one embodiment, the width (329 a) of the thermal break 327 may range from about 0.5 mm (millimeter) to about 10 mm. According to another embodiment, the width (329 a) of the thermal break 327 may range from about 1 mm to about 5 mm. According to another embodiment, the width (329 a) of the thermal break 327 may range from about 2 mm to about 5 mm. According to yet another embodiment, the width (329 a) of the thermal break 327 may range from about 3 mm to about 4 mm.

According to one embodiment, the height (329 b) of the thermal break 327 may range from about 0.5 mm (millimeter) to about 10 mm. According to another embodiment, the height (329 b) of the thermal break 327 may range from about 1 mm to about 5 mm. According to another embodiment, the height (329 b) of the thermal break 327 may range from about 2 mm to about 5 mm. According to yet another embodiment, the height (329 b) of the thermal break 327 may range from about 3 mm to about 4 mm.

According to one embodiment, the length (329 c) of the thermal break 327 may range from about 0.1 cm (centimeter) to about 5 cm. According to another embodiment, the length (329 c) of the thermal break 327 may range from about 0.5 cm to about 2 cm. According to another embodiment, the length (329 c) of the thermal break 327 may range from about 0.5 cm to about 1.5 cm. According to yet another embodiment, the length (329 c) of the thermal break 327 may range from about 0.5 cm to about 1 cm.

According to one embodiment, the thermal break 327 comprises dimensions such that a heat transfer coefficient of the thermal break 327 is about 0.1 W/m-K (Watts per meter-Kelvin) or less. According to another embodiment, the thermal break 327 comprises dimensions such that a heat transfer coefficient of the thermal break 327 is about 0.05 W/m-K or less. According to another embodiment, the thermal break 327 comprises dimensions such that a heat transfer coefficient of the thermal break 327 is about 0.04 W/m-K or less. According to another embodiment, the thermal break 327 comprises dimensions such that a heat transfer coefficient of the thermal break 327 is about 0.03 W/m-K or less. According to another embodiment, the thermal break 327 comprises dimensions such that a heat transfer coefficient of the thermal break 327 is about 0.02 W/m-K or less. According to yet another embodiment, the thermal break 327 comprises dimensions such that a heat transfer coefficient of the thermal break 327 is about 0.01 W/m-K or less.

Referring now to FIG. 7, a top view of a heat source 420 is presented according to another embodiment. The heat source 420 comprises a resistive heating element 430 following a serpentine-like path that weaves through a plurality of dynamic structures (424, 424′, and 424″) coupled to a mounting structure 410 and configured to move in directions (425, 425′, and 425″), respectively. For example, the serpentine-like path may comprise substantially straight sections interconnected by bends 433. One end of the serpentine-like path may be connected to a power source, while the opposing end of the serpentine-like path may be connected to the electrical ground for the power source. In this embodiment, the plurality of dynamic mounting devices (424, 424′, and 424″) can alleviate slack or sagging in the resistive heating element 430, and they may substantially reduce or minimize slippage between the resistive heating element 430 and the dynamic mounting devices 424 (such slippage may cause particle generation and/or contamination).

Although the gas heating device has been described for use in a deposition system, the gas heating device may be used in any system requiring gas heating of a process component, such as a film forming composition. Other systems in semiconductor manufacturing and integrated circuit (IC) manufacturing may include etching systems, thermal processing systems, etc.

FIG. 8 illustrates a method of depositing a thin film on a substrate according to another embodiment. The method 700 includes, at 710, coupling a gas heating device comprising a plurality of heating element zones to a process chamber for a deposition system, wherein each heating element zones of the gas heating device comprises one or more resistive heating elements and a mounting structure configure to support the one or more resistive elements.

In 720, a temperature of the one or more resistive heating elements in each of the plurality of heating element zones is elevated. For example, the temperature may be elevated by flowing electrical current through the one or more resistive heating elements.

In 730, a change in the length of the one or more resistive heating elements in each of the plurality of heating element zones is automatically compensated by one or more dynamic mounting devices coupled to the mounting structure. For example, the compensation for the change in element length may be performed while substantially reducing slippage between the one or more resistive heating elements and the dynamic mounting device. Furthermore, each of the one or more dynamic mounting devices includes a thermal break to reduce heat transfer between the one or more resistive heating elements and the mounting structure.

In 740, a substrate is provided in the process chamber of the deposition system. For example, the deposition system can include the deposition system described above in FIG. 1. The substrate can, for example, be a Si substrate. A Si substrate can include n- or p-type material, depending on the type of device being formed. The substrate can be of any size or shape, for example a 200 mm substrate, a 300 mm substrate, or an even larger substrate. According to an embodiment of the invention, the substrate can be a patterned substrate containing one or more vias or trenches, or combinations thereof.

In 750, a film forming composition is provided to a gas distribution system that is configured to introduce the film forming composition to the process chamber above the substrate. For example, the gas distribution system can be located above the substrate and opposing an upper surface of the substrate.

In 760, one or more constituents of the film forming composition are subjected to pyrolysis using the gas heating device. The gas heating device can be any one of the systems described in FIGS. 2 through 6 above, or any combination thereof.

In 770, the substrate is exposed to the film forming composition to facilitate the formation of the thin film. The temperature of the substrate can be set to a value less than the temperature of the one or more heating elements, e.g. one or more resistive film heating elements. For example, the temperature of the substrate can be approximately room temperature.

FIG. 9 illustrates a method of depositing a thin film on a substrate according to another embodiment. The method 800 includes, at 810, disposing a gas heating device comprising a plurality of heating element zones to a process chamber for a deposition system, wherein each heating element zones of the gas heating device comprises one or more resistive heating elements and a mounting structure configure to support the one or more resistive elements.

The method may further comprise spacing each of the plurality of heating element zones from the substrate to control a diffusion path length between a reaction zone at each of the plurality of heating element zones to a surface of the substrate. For example, the method may comprise differentially spacing each of the plurality of heating element zones from the substrate to control a diffusion path length between a reaction zone at each of the plurality of heating element zones to a surface of the substrate. Alternatively or additionally, the method may further comprise differentially orienting each of the plurality of heating element zones relative to the substrate to control a diffusion path length between a reaction zone at each of the plurality of heating element zones and a surface of the substrate. Further yet, the method may include adjusting the position and/or orientation of at least one of the plurality of heating element zones.

In 820, a temperature of each of the plurality of heating element zones is independently controlled. For example, the temperature each one of the plurality of heating element zones may be controlled by controllably adjusting an electrical signal coupled to each one of the plurality of heating element zones. The electrical signal may include a power, a voltage, or a current, or any combination of two or more thereof. The method may comprise temporally modulating or pulsing the power to at least one of the plurality of heating element zones.

In 830, a substrate is provided in the process chamber of the deposition system. For example, the deposition system can include the deposition system described above in FIGS. 1, 3A, 3B, 3C, 3D, and 3E. The substrate can, for example, be a Si substrate. A Si substrate can include n- or p-type material, depending on the type of device being formed. The substrate can be of any size or shape, for example a 200 mm substrate, a 300 mm substrate, or an even larger substrate. According to an embodiment of the invention, the substrate can be a patterned substrate containing one or more vias or trenches, or combinations thereof. The method may include adjusting a position of the substrate holder relative to the plurality of heating element zones relative to the substrate.

The substrate holder comprises one or more temperature control zones for controlling a temperature of the substrate. The one or more temperature control zones may correspond to each of the plurality of heating element zones. The one or more temperature control zones may include one or more temperature control elements embedded in the substrate holder for heating and/or cooling different regions of the substrate holder, and/or one or more heat transfer gas supply zones for supplying a heat transfer gas to different regions at a backside of the substrate.

In 840, a temperature of the substrate is independently controlled at the one or more temperature control zones. Further, the temperature of the substrate may be temporally modulated for at least one of the one or more temperature control zones.

In 850, a film forming composition is provided to a gas distribution system that is configured to introduce the film forming composition to the process chamber above the substrate. For example, the gas distribution system can be located above the substrate and opposing an upper surface of the substrate. The method may further comprise independently controlling a flow rate of the film forming composition to each of the plurality of heating element zones. Further yet, the method may comprise temporally modulating or pulsing the flow rate to at least one of the plurality of heating element zones.

In 860, one or more constituents of the film forming composition are subjected to pyrolysis using the gas heating device. The gas heating device can be any one of the systems described in FIGS. 1 through 7 above, or any combination thereof.

In 870, the substrate is exposed to the film forming composition to facilitate the formation of the thin film. The temperature of the substrate can be set to a value less than the temperature of the one or more heating elements, e.g. one or more resistive film heating elements. For example, the temperature of the substrate can be approximately room temperature.

Although only certain embodiments of this invention have been described in detail above, those skilled in the art will readily appreciate that many modifications are possible in the embodiments without materially departing from the novel teachings and advantages of this invention. Accordingly, all such modifications are intended to be included within the scope of this invention. 

1. A method of depositing a thin film on a substrate in a deposition system, comprising: disposing a gas heating device comprising a plurality of heating element zones in a deposition system, each of said plurality of heating element zones having one or more resistive heating elements; independently controlling a temperature of each of said plurality of heating element zones; providing a substrate on a substrate holder in said deposition system, wherein said substrate holder comprises one or more temperature control zones; providing a film forming composition to said gas heating device coupled to said deposition system; pyrolyzing one or more constituents of said film forming composition using said gas heating device; and introducing said film forming composition to said substrate in said deposition system to deposit a thin film on said substrate.
 2. The method of claim 1, further comprising: independently controlling a temperature of said substrate at said one or more temperature control zones.
 3. The method of claim 2, wherein said substrate holder comprises a plurality of temperature control zones, each of said plurality of temperature control zones uniquely corresponds to each of said plurality of heating element zones.
 4. The method of claim 2, wherein said independently controlling a temperature of said substrate at said one or more temperature control zones comprises independently controlling a temperature of said substrate holder at said one or more temperature control zones.
 5. The method of claim 2, wherein said independently controlling a temperature of said substrate at said one or more temperature control zones comprises independently controlling a pressure of a heat transfer gas supplied to a backside of said substrate between said substrate and said substrate holder.
 6. The method of claim 2, further comprising: temporally modulating a temperature of said substrate for at least one of said one or more temperature control zones.
 7. The method of claim 2, wherein said independently controlling a temperature of each of said plurality of heating element zones comprises independently controlling an electrical signal coupled to each of said plurality of heating element zones.
 8. The method of claim 7, wherein said electrical signal comprises a power, a voltage, or a current, or any combination of two or more thereof.
 9. The method of claim 8, further comprising: temporally modulating or pulsing said power to at least one of said plurality of heating element zones.
 10. The method of claim 1, further comprising: independently controlling a flow rate of said film forming composition to each of said plurality of heating element zones.
 11. The method of claim 10, further comprising: temporally modulating or pulsing said flow rate to at least one of said plurality of heating element zones.
 12. The method of claim 1, further comprising: spacing each of said plurality of heating element zones from said substrate to control a diffusion path length between a reaction zone at each of said plurality of heating element zones to a surface of said substrate.
 13. The method of claim 1, further comprising: differentially spacing each of said plurality of heating element zones from said substrate to control a diffusion path length between a reaction zone at each of said plurality of heating element zones to a surface of said substrate.
 14. The method of claim 1, further comprising: differentially orienting each of said plurality of heating element zones relative to said substrate to control a diffusion path length between a reaction zone at each of said plurality of heating element zones and a surface of said substrate.
 15. The method of claim 1, further comprising: adjusting a position of at least one of said plurality of heating element zones relative to said substrate.
 16. The method of claim 1, further comprising: adjusting an orientation of at least one of said plurality of heating element zones relative to said substrate.
 17. The method of claim 1, further comprising: adjusting a position of said substrate holder relative to said plurality of heating element zones relative to said substrate.
 18. A computer readable medium containing program instructions for execution on a computer system, which when executed by the computer system, cause a deposition system to perform the steps of: disposing a gas heating device comprising a plurality of heating element zones in a deposition system, each of said plurality of heating element zones having one or more resistive heating elements; independently controlling a temperature of each of said plurality of heating element zones; providing a substrate on a substrate holder in said deposition system, wherein said substrate holder comprises one or more temperature control zones; providing a film forming composition to said gas heating device coupled to said deposition system; pyrolyzing one or more constituents of said film forming composition using said gas heating device; and introducing said film forming composition to said substrate in said deposition system to deposit a thin film on said substrate. 